Structural studies of Cr-doped mullite derived from single-phase precursors

Cr-doped mullites were prepared from single-phase precursors containing up to 9.60 wt% Cr₂O₃ using a sol-gel technique followed by thermal treatment. Particle induced X-ray emission spectroscopy and X-ray powder diffraction were used to characterize the samples. Mullites were orthorhombic, space group Pbam. Cr doping caused the increase of unit-cell parameters. Strongest expansion was noticed along c-axis followed by a and b (Δc/c=0.089, Δa/a=0.061, Δb/b=0.045% per mole Cr₂O₃). A second phase, namely θ-(Al,Cr)₂O₃, was revealed by XRD in the sample containing 9.60 wt% Cr₂O₃. The structure of mullites was refined by the Rietveld method, location of Cr³⁺ was performed by the EPR spectroscopy. At low chromium doping level (Cr₂O₃ content less than ∼5 wt%) Cr³⁺ ions were substituted for Al³⁺ in the AlO₆ octahedra of the mullite structure (M1 site). For higher doping level, Cr³⁺ ions were additionally substituted for Al³⁺ in the AlO₆ octahedra of the second phase [θ-(Al,Cr)₂O₃ at 1400 °C, or α-(Al,Cr)₂O₃ at 1600 °C] which segregated in the system. Substitution of Cr³⁺ for Al³⁺ on M1 site in the mullite structure resulted in increase of average distances in (M1)O₆ octahedron and decrease of average distances in T*O₄ tetrahedron, while average distances in TO₄ tetrahedron stayed almost constant.     

Initial study on the structure and photoluminescence properties of SiC films doped with Al

SiC films doped with aluminum (Al) were prepared by the rf-magnetron sputtering technique on p-Si substrates with a composite target of a single crystalline SiC containing several Al pieces on the surface. The as-deposited films were annealed in the temperature range of 400-800 °C under nitrogen ambient. The thin films have been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). The results show that the introduction of Al into films hinders crystalline formation process. And with the increase of annealing temperature, more Si particles are formed in the films, which strongly affect the optical absorption properties. The photoluminescence (PL) spectra of the samples show two peaks at 370 nm and 412 nm. The intensities of the PL peaks are evidently improved after Al doped. We attribute the origin of the two PL peaks to a kind of Si-related defect centres. The obtained results are expected to have important applications in modern optoelectronic devices.     

Experimental study of light diffraction by standing ultrasonic wave with cylindrical symmetry

We report a new acousto-optic arrangement based on ultrasonic wave with cylindrical symmetry. The theory of light interaction with standing cylindrical ultrasonic wave is experimentally verified in the Fraunhofer region. A very good agreement of experimental results with numerical calculations based on the proposed theory is found. The diffraction pattern consists of ring-shaped diffraction orders which posses a fine structure. The time average light intensity of the whole zeroth diffraction order as a function of the Raman-Nath parameter is investigated. The modulation properties of presented system are examined by means of single photon counting technique. Finally, some potentially useful applications in the laser and fibre technology are suggested.     

极大单调算子的一个邻近点算法

设E是自反的Banach空间,T∶E→2E是极大单调算子.T-10≠.令x0∈E,yn=(J λnT)-1xn en,xn 1=J-1(αnJxn (1-αn)Jyn),n≥0,λn>0,αn∈[0,1],本文研究了{xn}收敛性.     

Absorption Complex between Porphyrin and Phenothiazine in Reverse Micelles

Porphyrin derivatives attract much more interest in photodynamic therapy (PDT). Their importance as therapeutic drugs and targeting agents has been widely recognized1, and many of the efforts have been put towards crafting new porphyrin-based molecular entities to achieve enhanced tumor localization, better tissue penetration and increased singlet oxygen quantum yield2. The states of porphyrins in tissue models such as micelles, lipid bilayers are extensively investigated focusing more or l…     

正整数的一类三分拆的应用

利用正整数n的一类特殊的3分拆n=n1+n2+n3,n1>n2>n3≥1,且n2+n3>n1的Ferrers图将不定方程4x1+3x2+2x3=n(n≥9)的正整数解与这种分拆联系起来,从而得到了该不定方程的正整数解数公式;同时也给出了正整数n的一类4分拆的计数公式.此外,还给出了周长为n的整边三角形的计数公式的一个简单证明.     

荧光光度法测定蔬果类罐头食品中的微量铅

以3mol/L HCl为介质,利用荧光光度计检测PbCl2-4的荧光强度,建立了测定蔬果类罐头食品中微量铅的新方法,该方法的检出限为8.8μg/mL,回收率为;97.0%.     

Adhesive-free bonding of Zerodur glass to silicon

This work demonstrates anodic bonding of Zerodur glass having very low co-efficient of thermal expansion (CTE) to Si, Zerodur glass to thermally grown silicon dioxide on silicon and Pyrex glass to Ge. Bonding results, using point cathode contact and plate cathode contact configurations, are discussed. Bonding parameters, i.e. applied dc voltage, temperature and bonding time were determined. Heating and cooling rates for crack-free bonding of Zerodur glass were also determined.     

Composition spread metal thin film fabrication technique based on ion beam sputter deposition

A composition spread metal thin film fabrication technique based on ion beam sputter deposition method was developed. The technique enables us to fabricate any desired part or a complete binary/ternary composition spread metal thin films onto a single substrate by sequentially sputtering different target materials. Composition spread metal thin films can be deposited directly on a dielectric film in patterned electrode shape for C-V and I-V measurements. The system could be especially useful in the search for new multi-component metal gate materials.     

Schottky metal library for ZNO-based UV photodiode fabricated by the combinatorial ion beam-assisted deposition

A binary alloy Schottky barrier diode on zinc oxide (ZnO) was developed using the combinatorial ion beam-assisted deposition system. The compositional fraction of the binary alloy was continuously varied using the composition-spread technique, to control the Schottky barrier height. After metal deposition, patterned Schottky diodes were fabricated on a ZnO single-crystal substrate. Pt-Ru alloy was selected from the work function viewpoint. Our experiments showed that the compositional fraction of the Schottky binary alloys changed continuously as designed and the Schottky barrier heights measured by current-voltage (I-V) measurements increased with increasing Pt content. Maximum barrier height difference for ZnO was 137 meV. Using ion beam deposition in parallel with the combinatorial system showed that the Schottky barrier heights for ZnO can be controlled by binary metal alloying.